In this study, we explored the use of rice-husk-derived nanosilica (nSiO2) as fillers in epoxy resins. The nSiO2 was irradiated with a capacitively coupled 13.56 MHz radio frequency (RF) plasma using an admixture of argon (Ar) and hexamethyldisiloxane (HMDSO) or 1,7-octadiene (OD) monomers. The plasma-polymerized nSiO2 was loaded at various concentrations (1–5%) into the epoxy matrix. Surface hydrophobicity of the plasma-treated nSiO2-filled composites increased, which is attributed to the attachment of functional groups from the monomer gases on the silica surface. Microhardness increased by at least 10% upon the inclusion of plasma-modified nSiO2 compared with pristine nSiO2–epoxy composites. Likewise, hardness increased with increasing loading volume, with the HMDSO-treated silica composite recording the highest increase. Elastic moduli of the composites also showed an increase of at least 14% compared with untreated nSiO2-filled composites. This work demonstrated the use of rice husk, an agricultural waste, as a nSiO2 source for epoxy resin fillers.

In this study, we demonstrate the feasibility of spray-depositing exfoliated graphene on flexible polyimide (PI) and rigid (soda lime glass) substrates for optoelectronic applications. The water contact angles of the substrates increased by 13% (for PI) and 49% (for glass) when the surfaces are pretreated with hexamethyldisiloxane, which significantly improved the adhesion of the films. Raman spectral analyses confirmed a minimum of 15 and a maximum of 23 layers of exfoliated graphene deposited on the substrates. After deposition, the films were exposed to 13.56 MHz radio-frequency plasma containing an admixture of argon and nitrogen gases. Plasma treatment modified the electrical properties with a response analogous to that of a rectifier. A 39% increase in transmittance in the visible region was also observed especially for glass substrates after plasma treatment without a significant change in film electrical conductivity.

Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

Carbon molecular ions were extracted from an ion source operated with a carbon filament cathode. The mass spectrum of the extracted beam showed a higher current of diatomic carbon molecular ions than atomic carbon ions. The magnetic filter field successfully reduced extraction of smaller mass ions, to make molecular carbon ion current comparable to the ion current of helium, which was used as a discharge support gas.

Natural zeolites such as mordenite are excellent adsorbents for heavy metals. To enhance the adsorption capacity of zeolite, sodium-exchanged samples were irradiated with 13.56 MHz capacitively coupled radio frequency (RF) argon gas discharge. Hexavalent chromium [Cr(VI)] was used as the test heavy metal. Pristine and plasma-treated zeolite samples were soaked in 50 mg/L Cr solution and the amount of adsorbed Cr(VI) on the zeolites was calculated at predetermined time intervals. Compared with untreated zeolite samples, initial Cr(VI) uptake was 70% higher for plasma-treated zeolite granules (50 W 30 min) after 1 h of soaking. After 24 h, all plasma-treated zeolites showed increased Cr(VI) uptake. For a 2- to 4-month period, Cr(VI) uptake increased about 130% compared with untreated zeolite granules. X-ray diffraction analyses between untreated and treated zeolite samples revealed no major difference in terms of its crystal structure. However, for plasma-treated samples, an increase in the number of surface defects was observed from scanning electron microscopy images. This increase in the number of surface defects induced by plasma exposure played a crucial role in increasing the number of active sorption sites on the zeolite surface.

The surface and growth conditions for the formation of textured polycrystalline bulk gallium nitride (GaN) crystals under nitrogen (N2) reactive plasma were investigated. Langmuir probe measurements were used to determine the electron density values near the Ga surface at different target locations and ranged from (6–16)×1010/cm2. Optical spectroscopy measurements showed reactive gallium (Ga) and nitrogen species present in the plasma. When the target was bombarded with highly energetic ions, peaks of sputtered Ga at 403 and 417 nm wavelengths were observed in the optical spectroscopy measurements. The top Ga surface showed increased roughening and the resulting crystals were of poor crystalline quality, with fresh Ga leftovers. Smoother crystals were formed when the Ga target was shielded from the direct bombardment of highly energetic N2 plasma, with no sputtered Ga peaks observed during the bombardment. X-ray diffraction (XRD) analysis results revealed well-oriented crystals at the (0002) reflection of GaN. This proved that the shielding of highly energetic ions to decrease roughening of the surface and allowing more neutrals for the reaction were effective in forming well-oriented bulk GaN crystals.