
<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">C. T. Que</style></author><author><style face="normal" font="default" size="100%">E. Estacio</style></author><author><style face="normal" font="default" size="100%">C. P. Sadia</style></author><author><style face="normal" font="default" size="100%">A. Somintac</style></author><author><style face="normal" font="default" size="100%">K. Yamamoto</style></author><author><style face="normal" font="default" size="100%">A. Salvador</style></author><author><style face="normal" font="default" size="100%">M. Tani</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates</style></title><secondary-title><style face="normal" font="default" size="100%">Quantum Electronics Conference &amp; Lasers and Electro-Optics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6193806</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Sydney, NSW</style></pub-location><pages><style face="normal" font="default" size="100%">458-460</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We report on the terahertz (THz) emission from n-GaAs/p-GaSb and /p-InAs/n-GaSb structures using a 1.55 μm femtosecond laser excitation. The effect of the n-GaAs thin film on a p-GaSb substrate is investigated. Significant THz emission from n-GaAs/p-GaSb compared to bare p-GaSb is observed and could be attributed to the built-in field at the interface of the sample. The comparison with a bulk p-InAs and p-InAs/n-GaSb indicates n-GaAs/p-GaSb is a strong THz emitter comparable with those InAs-based emitters.</style></abstract></record></records></xml>