
@proceedings {691,
	title = {Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates},
	journal = {Quantum Electronics Conference \& Lasers and Electro-Optics},
	year = {2011},
	pages = {458-460},
	publisher = {IEEE},
	address = {Sydney, NSW},
	abstract = {We report on the terahertz (THz) emission from n-GaAs/p-GaSb and /p-InAs/n-GaSb structures using a 1.55 μm femtosecond laser excitation. The effect of the n-GaAs thin film on a p-GaSb substrate is investigated. Significant THz emission from n-GaAs/p-GaSb compared to bare p-GaSb is observed and could be attributed to the built-in field at the interface of the sample. The comparison with a bulk p-InAs and p-InAs/n-GaSb indicates n-GaAs/p-GaSb is a strong THz emitter comparable with those InAs-based emitters.},
	url = {http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6193806},
	author = {C. T. Que and E. Estacio and C. P. Sadia and A. Somintac and K. Yamamoto and A. Salvador and M. Tani}
}
