
@article {1048,
	title = {Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters},
	journal = {Applied Physics Express},
	volume = {8},
	number = {3},
	year = {2015},
	pages = {035501},
	abstract = {We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 {\textmu}m thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70\% of that of bulk p-InAs.},
	url = {http://iopscience.iop.org/1882-0786/8/3/035501/},
	author = {C. P. Sadia and J. Muldera and E. S. Estacio and A. S. Somintac and A. A. Salvador and C. T. Que and K. Yamamoto and M. Tani}
}
