
@article {1048,
	title = {Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters},
	journal = {Applied Physics Express},
	volume = {8},
	number = {3},
	year = {2015},
	pages = {035501},
	abstract = {We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 {\textmu}m thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70\% of that of bulk p-InAs.},
	url = {http://iopscience.iop.org/1882-0786/8/3/035501/},
	author = {C. P. Sadia and J. Muldera and E. S. Estacio and A. S. Somintac and A. A. Salvador and C. T. Que and K. Yamamoto and M. Tani}
}
@article {680,
	title = {Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(100)},
	journal = {Journal of Applied Physics},
	volume = {112},
	number = {123514},
	year = {2012},
	pages = {1-5},
	abstract = {Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75\% that of bulk p-InAs. The GaAs
films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects. },
	url = {http://dx.doi.org/10.1063/1.4770267},
	author = {C. P. Sadia and A.M. Laganapan and M.A. Tumanguil and E. Estacio and A. Somintac and A. Salvador and C. T. Que and K. Yamamoto and M. Tani}
}
@proceedings {691,
	title = {Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates},
	journal = {Quantum Electronics Conference \& Lasers and Electro-Optics},
	year = {2011},
	pages = {458-460},
	publisher = {IEEE},
	address = {Sydney, NSW},
	abstract = {We report on the terahertz (THz) emission from n-GaAs/p-GaSb and /p-InAs/n-GaSb structures using a 1.55 μm femtosecond laser excitation. The effect of the n-GaAs thin film on a p-GaSb substrate is investigated. Significant THz emission from n-GaAs/p-GaSb compared to bare p-GaSb is observed and could be attributed to the built-in field at the interface of the sample. The comparison with a bulk p-InAs and p-InAs/n-GaSb indicates n-GaAs/p-GaSb is a strong THz emitter comparable with those InAs-based emitters.},
	url = {http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6193806},
	author = {C. T. Que and E. Estacio and C. P. Sadia and A. Somintac and K. Yamamoto and A. Salvador and M. Tani}
}
